Manufacture | Part Number | Description |
---|---|---|
Siemens Semiconductor Group |
|
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
Siemens Semiconductor Group |
|
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens Semiconductor Group |
|
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens Semiconductor Group |
|
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Sirenza Microdevices |
|
Low Noise pHEMT GaAs FET |
Siemens Semiconductor Group |
|
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Mitsubishi |
|
Low Noise GaAs FET |
Mitsubishi |
|
LOW NOISE GaAs FET |
Maxim |
|
Low-Noise / Regulated / Negative Charge-Pump Power Supplies for GaAsFET Bias |
NEC |
|
(NE13700 / NE13783) LOW NOISE KU-BAND GAAS MESFET |
Total 62 results |